Littelfuse IXTP64N10L2

包装/外壳

TO-220-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

64

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (mOhm)

32@10V

Typical Gate Charge @ Vgs (nC)

100@10V

Typical Gate Charge @ 10V (nC)

100

Typical Input Capacitance @ Vds (pF)

3620@25V

Maximum Power Dissipation (mW)

357000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

38

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

357 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

100 nC

Rds On - Drain-Source Resistance

32 mOhms

Id - Continuous Drain Current

64 A

零件状态

活跃

技术

Si

配置

Single

通道数量

1 Channel

信道型

N