Littelfuse IXTQ182N055T

包装/外壳

TO-3P-3

EU RoHS

符合免除

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Continuous Drain Current (A)

182

Maximum Drain Source Resistance (mOhm)

5@10V

Typical Gate Charge @ Vgs (nC)

114@10V

Typical Gate Charge @ 10V (nC)

114

Typical Input Capacitance @ Vds (pF)

4850@25V

Maximum Power Dissipation (mW)

360000

Typical Fall Time (ns)

38

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

53

Typical Turn-On Delay Time (ns)

36

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Width

4.9(Max)

Package Length

15.8(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-3P

Supplier Package

TO-3P

Lead Shape

通孔

Vds - Drain-Source Breakdown Voltage

55 V

Pd - Power Dissipation

360 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

5 mOhms

Id - Continuous Drain Current

182 A

零件状态

Obsolete

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N