Littelfuse IXTT02N450HV

包装/外壳

TO-268-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

4500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

6.5

Maximum Continuous Drain Current (A)

0.2

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (mOhm)

625000@10V

Typical Gate Charge @ Vgs (nC)

10.4@10V

Typical Gate Charge @ 10V (nC)

10.4

Typical Input Capacitance @ Vds (pF)

256@25V

Maximum Power Dissipation (mW)

113000

Typical Fall Time (ns)

143

Typical Rise Time (ns)

48

Typical Turn-Off Delay Time (ns)

28

Typical Turn-On Delay Time (ns)

17

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

MSL

-

Qualification

-

Continuous Drain Current Id

200mA

Vds - Drain-Source Breakdown Voltage

4.5 kV

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

113 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

10.6 nC

Rds On - Drain-Source Resistance

625 Ohms

Id - Continuous Drain Current

200 mA

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

113W

信道型

N