参数名
参数值
参数名
参数值
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
150
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
120
Maximum Drain Source Resistance (MOhm)
16@10V
Typical Gate Charge @ Vgs (nC)
150@10V
Typical Gate Charge @ 10V (nC)
150
Typical Input Capacitance @ Vds (pF)
4900@25V
Maximum Power Dissipation (mW)
600000
Typical Fall Time (ns)
26
Typical Rise Time (ns)
42
Typical Turn-Off Delay Time (ns)
85
Typical Turn-On Delay Time (ns)
33
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
表面贴装
Package Height
5.1(Max)
Package Width
14(Max)
Package Length
16.05(Max)
PCB changed
2
Tab
Tab
Supplier Package
TO-268
Continuous Drain Current
120(A)
Drain-Source On-Volt
150(V)
Operating Temperature Classification
Military
Package Type
TO-268
Operating Temp Range
-55C to 175C
Gate-Source Voltage (Max)
±20(V)
Number of Elements
1
Rad Hardened
无
零件状态
活跃
类型
功率MOSFET
引脚数量
3
极性
N
配置
Single
功率耗散
600(W)
信道型
N