参数名
参数值
参数名
参数值
包装/外壳
TO-268-3
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
100
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
140
Maximum Drain Source Resistance (MOhm)
11@10V
Typical Gate Charge @ Vgs (nC)
155@10V
Typical Gate Charge @ 10V (nC)
155
Typical Input Capacitance @ Vds (pF)
4700@25V
Maximum Power Dissipation (mW)
600000
Typical Fall Time (ns)
26
Typical Rise Time (ns)
50
Typical Turn-Off Delay Time (ns)
85
Typical Turn-On Delay Time (ns)
35
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
表面贴装
Package Height
5.1(Max)
Package Width
14(Max)
Package Length
16.05(Max)
PCB changed
2
Tab
Tab
Supplier Package
TO-268
Typical Turn-On Delay Time
35 ns
Pd - Power Dissipation
600 W
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Rds On - Drain-Source Resistance
11 mOhms
Typical Turn-Off Delay Time
85 ns
包装
卷带
零件状态
活跃
类型
PolarHT
子类别
Discrete Semiconductor Modules
技术
Si
引脚数量
3
配置
Single
上升时间
50 ns
产品类别
Discrete Semiconductor Modules
信道型
N
产品
功率MOSFET模块