Littelfuse IXTY01N100

包装/外壳

TO-252-3

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.10.00.80

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.1

Maximum Drain Source Resistance (MOhm)

80000@10V

Typical Gate Charge @ Vgs (nC)

6.9@10V

Typical Gate Charge @ 10V (nC)

6.9

Typical Input Capacitance @ Vds (pF)

54@25V

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

12

Typical Turn-Off Delay Time (ns)

28

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.38(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-252AA

Continuous Drain Current

0.1(A)

Drain-Source On-Volt

1000(V)

Operating Temperature Classification

Military

Package Type

TO-252AA

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

Qualification

-

Continuous Drain Current Id

100mA

Vds - Drain-Source Breakdown Voltage

1 kV

Pd - Power Dissipation

25 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

80 Ohms

Id - Continuous Drain Current

100 mA

系列

IXTY01N100

零件状态

活跃

类型

功率MOSFET

技术

Si

引脚数量

3

极性

N

配置

Single

通道数量

1 Channel

功率耗散

25(W)

信道型

N