Littelfuse IXTY08N100P

包装/外壳

TO-252-3

EU RoHS

Compliant

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.8

Maximum Drain Source Resistance (MOhm)

20000@10V

Typical Gate Charge @ Vgs (nC)

11.3@10V

Typical Gate Charge @ 10V (nC)

11.3

Typical Input Capacitance @ Vds (pF)

240@25V

Maximum Power Dissipation (mW)

42000

Typical Fall Time (ns)

34

Typical Rise Time (ns)

37

Typical Turn-Off Delay Time (ns)

35

Typical Turn-On Delay Time (ns)

19

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

42 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

11.3 nC

Rds On - Drain-Source Resistance

20 Ohms

Id - Continuous Drain Current

800 mA

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N