Littelfuse IXTY2N100P-TRL

包装/外壳

TO-252-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

2

Maximum Drain Source Resistance (MOhm)

7500@10V

Typical Gate Charge @ Vgs (nC)

24.3@10V

Typical Gate Charge @ 10V (nC)

24.3

Typical Input Capacitance @ Vds (pF)

655@25V

Maximum Power Dissipation (mW)

86000

Typical Fall Time (ns)

27

Typical Rise Time (ns)

29

Typical Turn-Off Delay Time (ns)

80

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Typical Turn-On Delay Time

25 ns

Pd - Power Dissipation

86 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

7.5 Ohms

Typical Turn-Off Delay Time

80 ns

包装

卷带

零件状态

活跃

类型

Polar

子类别

Discrete Semiconductor Modules

技术

Si

引脚数量

3

配置

Single

上升时间

29 ns

产品类别

Discrete Semiconductor Modules

信道型

N

产品

功率MOSFET模块