MagnaChip MDD1902RH

底架

表面贴装

引脚数

3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

40

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

28@10V

Typical Gate Charge @ Vgs (nC)

39.8@10V

Typical Gate Charge @ 10V (nC)

39.8

Typical Input Capacitance @ Vds (pF)

2087@25V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

14

Typical Rise Time (ns)

27.5

Typical Turn-Off Delay Time (ns)

38.5

Typical Turn-On Delay Time (ns)

10.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Positive Gate Source Voltage (V)

20

Maximum Diode Forward Voltage (V)

1.2

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.1

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

Number of Elements

1

RoHS

Compliant

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDD1902RH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.75

包装

卷带

零件状态

活跃

最高工作温度

150 °C

最小工作温度

-55 °C

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

配置

Single

功率耗散

83 W

连续放电电流(ID)

40 A

栅极至源极电压(Vgs)

20 V

信道型

N

辐射硬化

无