MagnaChip MDD3N50GRH

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

2.8

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

2500@10V

Typical Gate Charge @ Vgs (nC)

6.75@10V

Typical Gate Charge @ 10V (nC)

6.75

Typical Input Capacitance @ Vds (pF)

285@25V

Maximum Power Dissipation (mW)

45000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

22

Typical Turn-Off Delay Time (ns)

33

Typical Turn-On Delay Time (ns)

19

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.1

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDD3N50GRH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.73

包装

卷带

零件状态

活跃

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

配置

Single

信道型

N