MagnaChip MDF1752TH

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

3

Maximum Continuous Drain Current (A)

12.6

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

8@10V

Typical Gate Charge @ Vgs (nC)

26.4@10V

Typical Gate Charge @ 10V (nC)

26.4

Typical Input Capacitance @ Vds (pF)

1480@20V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

21

Typical Turn-Off Delay Time (ns)

31

Typical Turn-On Delay Time (ns)

9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

15.2(Max)

Package Width

4.7(Max)

Package Length

10.36(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220F

Lead Shape

通孔

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDF1752TH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.74

包装

Tube

零件状态

Unconfirmed

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

配置

Single

信道型

N