MagnaChip MDF1903TH

底架

通孔

引脚数

3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

3

Maximum Continuous Drain Current (A)

12

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

110@10V

Typical Gate Charge @ Vgs (nC)

8.8@10V

Typical Gate Charge @ 10V (nC)

8.8

Typical Input Capacitance @ Vds (pF)

475@25V

Maximum Power Dissipation (mW)

33800

Typical Fall Time (ns)

5.5

Typical Rise Time (ns)

10.6

Typical Turn-Off Delay Time (ns)

16.2

Typical Turn-On Delay Time (ns)

6.8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

15.2(Max)

Package Width

4.7(Max)

Package Length

10.36(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220F

Lead Shape

通孔

Schedule B

8541290080

Number of Elements

1

RoHS

Compliant

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDF1903TH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.72

包装

Tube

零件状态

活跃

最高工作温度

150 °C

最小工作温度

-55 °C

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

配置

Single

连续放电电流(ID)

12 A

栅极至源极电压(Vgs)

20 V

信道型

N

辐射硬化

无