MagnaChip MDHT4N20YURH

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

0.85

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

1350@10V

Typical Gate Charge @ Vgs (nC)

3.2@5V

Typical Input Capacitance @ Vds (pF)

148@25V

Maximum Power Dissipation (mW)

2100

Typical Fall Time (ns)

13

Typical Rise Time (ns)

38

Typical Turn-Off Delay Time (ns)

11

Typical Turn-On Delay Time (ns)

6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.7(Max)

Package Width

3.7(Max)

Package Length

6.7(Max)

PCB changed

3

Tab

Tab

Standard Package Name

SOT

Supplier Package

SOT-223

Lead Shape

Gull-wing

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDHT4N20YURH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.72

包装

卷带

零件状态

活跃

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

4

配置

单排双泄

信道型

N