MagnaChip MDP1930TH

材料

Si

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

80

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

250

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

2.5@10V

Typical Gate Charge @ Vgs (nC)

186.3@10V

Typical Gate Charge @ 10V (nC)

186.3

Typical Input Capacitance @ Vds (pF)

12222@40V

Maximum Power Dissipation (mW)

312500

Typical Fall Time (ns)

54.2

Typical Rise Time (ns)

24.2

Typical Turn-Off Delay Time (ns)

141

Typical Turn-On Delay Time (ns)

39.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.65(Max)

Package Width

4.83(Max)

Package Length

10.67(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDP1930TH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.75

包装

Tube

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

配置

Single

信道型

N