MagnaChip MDP2N60TH

底架

通孔

引脚数

3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

2

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

4500@10V

Typical Gate Charge @ Vgs (nC)

6.7@10V

Typical Gate Charge @ 10V (nC)

6.7

Typical Input Capacitance @ Vds (pF)

275@25V

Maximum Power Dissipation (mW)

53900

Typical Fall Time (ns)

38.4

Typical Rise Time (ns)

29.6

Typical Turn-Off Delay Time (ns)

40.4

Typical Turn-On Delay Time (ns)

10.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.65(Max)

Package Width

4.83(Max)

Package Length

10.67(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

Continuous Drain Current

2(A)

Drain-Source On-Volt

600(V)

Operating Temperature Classification

Military

Package Type

TO-220

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

Schedule B

8541290080/8541290080/8541290080/8541290080/8541290080

RoHS

Compliant

包装

Tube

零件状态

Obsolete

类型

功率MOSFET

最高工作温度

150 °C

最小工作温度

-55 °C

引脚数量

3

极性

N

配置

Single

功率耗散

53.9(W)

连续放电电流(ID)

2 A

栅极至源极电压(Vgs)

30 V

信道型

N

辐射硬化

无