MagnaChip MDS3651URH

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

3

Maximum Continuous Drain Current (A)

6

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

35@10V

Typical Gate Charge @ Vgs (nC)

18.4@10V

Typical Gate Charge @ 10V (nC)

18.4

Typical Input Capacitance @ Vds (pF)

874@15V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

8.6

Typical Rise Time (ns)

29.8

Typical Turn-Off Delay Time (ns)

26.3

Typical Turn-On Delay Time (ns)

9.8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.5(Max)

Package Width

3.9

Package Length

4.9

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDS3651URH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.74

包装

卷带

零件状态

活跃

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

8

配置

单四漏三源

信道型

P