MagnaChip MDV1523URH

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.7

Maximum Continuous Drain Current (A)

17.8

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

6.1@10V

Typical Gate Charge @ Vgs (nC)

25.5@10V|[email protected]

Typical Gate Charge @ 10V (nC)

25.5

Typical Input Capacitance @ Vds (pF)

1584@15V

Maximum Power Dissipation (mW)

3400

Typical Fall Time (ns)

9.8

Typical Rise Time (ns)

11.9

Typical Turn-Off Delay Time (ns)

35.8

Typical Turn-On Delay Time (ns)

8.8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.75(Max)

Package Width

3.2(Max)

Package Length

3.2(Max)

PCB changed

8

Standard Package Name

DFN

Supplier Package

功率 DFN EP

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDV1523URH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.73

包装

卷带

零件状态

活跃

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

8

配置

单四漏三源

信道型

N