MagnaChip MDV1525URH

表面安装

YES

终端数量

5

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.7

Maximum Continuous Drain Current (A)

13.8

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

10.1@10V

Typical Gate Charge @ Vgs (nC)

12.6@10V|[email protected]

Typical Gate Charge @ 10V (nC)

12.6

Typical Input Capacitance @ Vds (pF)

811@15V

Maximum Power Dissipation (mW)

3400

Typical Fall Time (ns)

7.1

Typical Rise Time (ns)

11.8

Typical Turn-Off Delay Time (ns)

20

Typical Turn-On Delay Time (ns)

6.8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.75(Max)

Package Width

3.2(Max)

Package Length

3.2(Max)

PCB changed

8

Standard Package Name

DFN

Supplier Package

功率 DFN EP

Schedule B

8541290080/8541290080/8541290080/8541290080/8541290080

RoHS

Non-Compliant

Package Description

SMALL OUTLINE, S-PDSO-F5

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDV1525URH

Package Shape

SQUARE

Manufacturer

MagnaChip Semiconductor Ltd

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

1.73

Drain Current-Max (ID)

24 A

包装

卷带

零件状态

Obsolete

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

8

JESD-30代码

S-PDSO-F5

配置

单四漏三源

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

漏极-源极导通最大电阻

0.0101 Ω

脉冲漏极电流-最大值(IDM)

60 A

DS 击穿电压-最小值

30 V

信道型

N

雪崩能量等级（Eas）

48 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR