MagnaChip MME80R290PRH

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

800

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

17

Maximum Drain Source Resistance (MOhm)

290@10V

Typical Gate Charge @ Vgs (nC)

56@10V

Typical Gate Charge @ 10V (nC)

56

Typical Input Capacitance @ Vds (pF)

1830@25V

Maximum Power Dissipation (mW)

181000

Typical Fall Time (ns)

49

Typical Rise Time (ns)

56.5

Typical Turn-Off Delay Time (ns)

160

Typical Turn-On Delay Time (ns)

32

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Continuous Drain Current

17(A)

Drain-Source On-Volt

800(V)

Operating Temperature Classification

Military

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

RoHS

Non-Compliant

Manufacturer Part Number

MME80R290PRH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

2.14

包装

卷带

零件状态

活跃

类型

功率MOSFET

Reach合规守则

unknown

极性

N

配置

Single

功率耗散

181(W)

信道型

N