MagnaChip MMP60R580PTH

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

超级交界处

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

8

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

580@10V

Typical Gate Charge @ Vgs (nC)

18@10V

Typical Gate Charge @ 10V (nC)

18

Typical Input Capacitance @ Vds (pF)

575@25V

Maximum Power Dissipation (mW)

70000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

34

Typical Turn-Off Delay Time (ns)

48

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.65

Package Width

4.83(Max)

Package Length

10.67(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

包装

Tube

引脚数量

3

配置

Single

信道型

N