Microchip Technology APTLGL325A1208G

包装/外壳

LP8

安装类型

通孔

RoHS

Details

Collector- Emitter Voltage VCEO Max

1.2 kV

Collector-Emitter Saturation Voltage

1.85 V

Continuous Collector Current at 25 C

420 A

Pd - Power Dissipation

1.5 kW

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Mounting Styles

底座安装

Factory Pack QuantityFactory Pack Quantity

1

Package

Bulk

Base Product Number

APTLGL325

厂商

微芯片技术

Product Status

活跃

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

APTLGL325A1208G

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

2.29

包装

Bulk

系列

-

ECCN 代码

EAR99

类型

IGBT

Reach合规守则

compliant

电压-隔离度

2500Vrms

配置

Dual

电压

1.2 kV

电流

420 A

功率耗散

1.5

最大耗散功率(Abs)

1500 W

集电极电流-最大值(IC)

420 A

连续集电极电流

420

集电极-发射器电压-最大值

1200 V

VCEsat-最大值

2.2 V

产品

IGBT硅模块