NXP Semiconductors AFT31150N

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

10

Maximum VSWR

10

Maximum Power Dissipation (mW)

741000

Output Power (W)

150(Typ)

Typical Power Gain (dB)

17

Maximum Frequency (MHz)

3100

Minimum Frequency (MHz)

2700

Typical Drain Efficiency (%)

50

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Supplier Package

OM-780 EP

Military

无

Mounting

表面贴装

Package Height

3.86(Max)

Package Length

20.62(Max)

Package Width

10.01(Max)

PCB changed

3

包装

卷带

零件状态

活跃

类型

MOSFET

引脚数量

3

配置

Single

信道型

N

操作方式

Pulse

RoHS状态

符合RoHS标准