NXP Semiconductors BLA1011-200,112

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

75

Maximum Gate Source Voltage (V)

±22

Maximum VSWR

5

Maximum Drain Source Resistance (mOhm)

60(Typ)@9V

Typical Forward Transconductance (S)

9

Maximum Power Dissipation (mW)

700000

Output Power (W)

250(Typ)

Typical Power Gain (dB)

15

Maximum Frequency (MHz)

1090

Minimum Frequency (MHz)

1030

Typical Fall Time (ns)

50

Typical Rise Time (ns)

50

Typical Drain Efficiency (%)

50

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

SOT-502A

Military

无

Mounting

Screw

Package Height

4.72(Max)

Package Length

34.16(Max)

Package Width

9.91(Max)

PCB changed

3

包装

Bulk

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

操作方式

AB类

RoHS状态

供应商未确认