NXP Semiconductors BLA6G1011-200R,112

ECCN (US)

EAR99

HTS

8541.29.00.75

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Continuous Drain Current (A)

49

PCB changed

3

Package Width

9.91(Max)

Package Length

34.16(Max)

Package Height

4.72(Max)

Mounting

Screw

Military

无

Supplier Package

SOT-502A

Maximum Operating Temperature (°C)

225

Minimum Operating Temperature (°C)

-65

Typical Drain Efficiency (%)

65

Typical Rise Time (ns)

10

Typical Fall Time (ns)

6

Minimum Frequency (MHz)

1030

Maximum Frequency (MHz)

1090

Typical Power Gain (dB)

20

Output Power (W)

200(Min)

Typical Forward Transconductance (S)

18

Typical Reverse Transfer Capacitance @ Vds (pF)

3@28V

Maximum Drain Source Resistance (mOhm)

[email protected]

包装

Bulk

零件状态

NRND

引脚数量

3

配置

Single

信道型

N

操作方式

脉冲射频

RoHS状态

符合RoHS标准