NXP Semiconductors BLC8G27LS-100AVJ

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Output Power (W)

17(Typ)

Typical Power Gain (dB)

15.5

Maximum Frequency (MHz)

2690

Minimum Frequency (MHz)

2490

Typical Drain Efficiency (%)

45

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

DFM

Military

无

Mounting

表面贴装

Package Height

4.01(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

7

包装

卷带

引脚数量

7

配置

双共源

信道型

N

操作方式

1-Carrier W-CDMA