NXP Semiconductors BLC8G27LS-140AVJ

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.3

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Forward Transconductance (S)

0.97

Output Power (W)

140

Typical Power Gain (dB)

14.5

Maximum Frequency (MHz)

2690

Minimum Frequency (MHz)

2496

Typical Drain Efficiency (%)

42

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

DFM

Military

无

Mounting

表面贴装

Package Height

4.01(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

7

零件状态

活跃

引脚数量

7

配置

双共源

信道型

N

操作方式

1-Carrier W-CDMA

RoHS状态

符合RoHS标准