NXP Semiconductors BLC8G27LS-60AV

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.35

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

120

Maximum IDSS (uA)

1.2

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Forward Transconductance (S)

0.4

Output Power (W)

50(Typ)

Typical Power Gain (dB)

14.7

Maximum Frequency (MHz)

2690

Minimum Frequency (MHz)

2300

Typical Drain Efficiency (%)

44

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

DFM

Military

无

Mounting

表面贴装

Package Height

4.01(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

6

Package Description

,

Manufacturer Part Number

BLC8G27LS-60AV

Manufacturer

恩智浦半导体

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.59

零件状态

活跃

Reach合规守则

unknown

引脚数量

6

配置

双共源

信道型

N

操作方式

1-Carrier W-CDMA

RoHS状态

符合RoHS标准