NXP Semiconductors BLF1046,135

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum VSWR

10

Maximum Continuous Drain Current (A)

4.5

Maximum Gate Source Leakage Current (nA)

125

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

300(Typ)@14V

Typical Input Capacitance @ Vds (pF)

46@26V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.5@26V

Typical Output Capacitance @ Vds (pF)

37@26V

Typical Forward Transconductance (S)

2

Output Power (W)

45

Typical Power Gain (dB)

14(Min)

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

46(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

LDMOST

Military

无

Mounting

Screw

Package Height

4.67(Max)

Package Length

20.45(Max)

Package Width

5.97(Max)

PCB changed

3

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

操作方式

CW Class-AB|2-Tone Class-AB|1-Tone Class-AB

RoHS状态

供应商未确认