NXP Semiconductors BLF178XR

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

110

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.25

Maximum VSWR

65(Min)

Maximum Gate Source Leakage Current (nA)

280

Maximum IDSS (uA)

2.8

Maximum Drain Source Resistance (mOhm)

70(Typ)@6V

Typical Input Capacitance @ Vds (pF)

414@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

5.5@50V

Typical Output Capacitance @ Vds (pF)

184@50V

Output Power (W)

1400(Typ)

Typical Power Gain (dB)

23|28

Maximum Frequency (MHz)

128

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

72

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

SOT-539A

Military

无

Mounting

Screw

Package Height

4.7(Max)

Package Length

41.28(Max)

Package Width

10.29(Max)

PCB changed

5

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BLF178XR

Manufacturer

恩智浦半导体

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.58

零件状态

活跃

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

5

配置

双共源

信道型

N

操作方式

CW|Pulsed RF

RoHS状态

符合RoHS标准