NXP Semiconductors BLF202,115

表面安装

YES

终端数量

8

晶体管元件材料

SILICON

PCB changed

8

ECCN (US)

EAR99

Maximum Continuous Drain Current (A)

1

Maximum VSWR

50

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

40

Number of Elements per Chip

1

Channel Mode

Enhancement

Package Width

4.93(Max)

Package Length

5.94(Max)

Mounting

表面贴装

Military

无

Supplier Package

CDIP SMD

AEC Qualified

Unknown

Maximum Operating Temperature (°C)

200

Minimum Operating Temperature (°C)

-65

Typical Drain Efficiency (%)

55

Minimum Frequency (MHz)

20

Maximum Frequency (MHz)

175

Typical Power Gain (dB)

13

Output Power (W)

2

Maximum Power Dissipation (mW)

5700

Typical Forward Transconductance (S)

0.135

Typical Output Capacitance @ Vds (pF)

[email protected]

Typical Reverse Transfer Capacitance @ Vds (pF)

[email protected]

Typical Input Capacitance @ Vds (pF)

[email protected]

Maximum Drain Source Resistance (mOhm)

4000@15V

Package Description

CERAMIC, SOT-409A, 8 PIN

Package Style

小概要

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Manufacturer Package Code

SOT409A

Operating Temperature-Max

200 °C

Rohs Code

有

Manufacturer Part Number

BLF202,115

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.77

Part Package Code

DIP

Drain Current-Max (ID)

1 A

包装

卷带

零件状态

Obsolete

ECCN 代码

EAR99

HTS代码

8541.29.00.75

子类别

FET 通用电源

端子位置

DUAL

终端形式

鸥翼

Reach合规守则

unknown

引脚数量

8

JESD-30代码

R-CDSO-G8

资历状况

不合格

Brand Name

恩智浦半导体

配置

单路 双漏 双门 四源

操作模式

增强型MOSFET

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

1 A

DS 击穿电压-最小值

40 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

5.7 W

最高频段

甚高频段

操作方式

CW Class-B

功率增益-最小值(Gp)

10 dB

RoHS状态

供应商未确认