NXP Semiconductors BLF2043,112

底架

表面贴装

引脚数

3

PCB changed

3

Channel Mode

Enhancement

ECCN (US)

EAR99

Maximum Frequency (MHz)

2200

Typical Power Gain (dB)

11.8(Min)

Output Power (W)

10

Typical Forward Transconductance (S)

0.5

Typical Output Capacitance @ Vds (pF)

9@26V

Typical Reverse Transfer Capacitance @ Vds (pF)

0.5@26V

Typical Input Capacitance @ Vds (pF)

11@26V

Maximum Drain Source Resistance (mOhm)

1200(Typ)@10V

Maximum Continuous Drain Current (A)

2.2

Maximum VSWR

10

Maximum Gate Source Voltage (V)

±15

Maximum Drain Source Voltage (V)

75

Process Technology

LDMOS

Number of Elements per Chip

1

Package Width

4.14(Max)

Package Length

5.16(Max)

Package Height

2.95(Max)

Mounting

表面贴装

Military

无

Supplier Package

CDIP SMD

Maximum Operating Temperature (°C)

200

Minimum Operating Temperature (°C)

-65

Typical Drain Efficiency (%)

33(Min)

Minimum Frequency (MHz)

30

Voltage, Rating

75 V

Number of Elements

1

RoHS

Compliant

零件状态

Obsolete

最高工作温度

200 °C

最小工作温度

-65 °C

额定电流

2.2 A

频率

2 GHz

引脚数量

3

配置

Single

输出功率

10 W

测试电流

85 mA

连续放电电流(ID)

2.2 A

增益

12.5 dB

最高频率

2.2 GHz

信道型

N

操作方式

CW Class-AB|2-Tone Class-AB

测试电压

26 V

RoHS状态

供应商未确认