NXP Semiconductors BLF2425M9LS140

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

3.1

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

420

Maximum IDSS (uA)

4.2

Maximum Drain Source Resistance (mOhm)

69(Typ)@6.85V

Typical Forward Transconductance (S)

13

Output Power (W)

140

Typical Power Gain (dB)

19

Maximum Frequency (MHz)

2500

Minimum Frequency (MHz)

2400

Typical Drain Efficiency (%)

58

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Military

无

零件状态

活跃

配置

Single

信道型

N

操作方式

CW

RoHS状态

符合RoHS标准