NXP Semiconductors BLF369,112

表面安装

YES

终端数量

4

晶体管元件材料

SILICON

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Drain Source Resistance (mOhm)

40(Typ)@14.5V

Typical Input Capacitance @ Vds (pF)

400@32V

Typical Reverse Transfer Capacitance @ Vds (pF)

15@32V

Typical Output Capacitance @ Vds (pF)

230@32V

Typical Forward Transconductance (S)

15

Output Power (W)

500

Typical Power Gain (dB)

18|19|19|19|19|19|19|19

Maximum Frequency (MHz)

500

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

60

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

LDMOST

Military

无

Mounting

Screw

Package Height

6.3

Package Length

44.5

Package Width

15.4

PCB changed

5

Package Description

ROHS COMPLIANT, CERAMIC PACKAGE-4

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Manufacturer Package Code

SOT800-2

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

200 °C

Rohs Code

有

Manufacturer Part Number

BLF369,112

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

2

Part Life Cycle Code

Obsolete

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.74

Part Package Code

SOT

零件状态

Obsolete

ECCN 代码

EAR99

HTS代码

8541.29.00.75

子类别

FET 通用电源

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

5

JESD-30代码

R-CDFM-F4

资历状况

不合格

Brand Name

恩智浦半导体

配置

双共源

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

DS 击穿电压-最小值

65 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

超高频段

操作方式

CW Class-AB|Pulsed RF Class-AB|2-Tone Class-AB

RoHS状态

是,有豁免