NXP Semiconductors BLF3G22-30,112

Typical Reverse Transfer Capacitance @ Vds (pF)

1.7@26V

Typical Forward Transconductance (S)

3

Output Power (W)

6(Typ)

Typical Power Gain (dB)

15

Maximum Frequency (MHz)

2200

Minimum Frequency (MHz)

2000

Typical Drain Efficiency (%)

24

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

CDFM

Military

无

Mounting

Screw

Package Height

4.62(Max)

Package Length

20.45(Max)

Package Width

10.29(Max)

PCB changed

3

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±15

Maximum VSWR

10

Maximum Continuous Drain Current (A)

4.5

Maximum Drain Source Resistance (mOhm)

300(Typ)

包装

Bulk

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

操作方式

2-Tone W-CDMA|2-Tone CW

RoHS状态

供应商未确认