NXP Semiconductors BLF546,112

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

10

Maximum Continuous Drain Current (A)

9

Maximum Drain Source Resistance (mOhm)

600@10V

Typical Input Capacitance @ Vds (pF)

60@28V

Typical Reverse Transfer Capacitance @ Vds (pF)

15@28V

Typical Output Capacitance @ Vds (pF)

46@28V

Typical Forward Transconductance (S)

1.7

Maximum Power Dissipation (mW)

145000

Output Power (W)

80

Typical Power Gain (dB)

13

Maximum Frequency (MHz)

500

Minimum Frequency (MHz)

100

Typical Drain Efficiency (%)

60

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

CDFM

Military

无

Mounting

Screw

Package Height

4.91(Max)

Package Length

24.9(Max)

Package Width

6.61(Max)

PCB changed

5

包装

Blister

零件状态

Obsolete

引脚数量

5

配置

双共源

信道型

N

操作方式

CW Class-B

RoHS状态

供应商未确认