NXP Semiconductors BLF647P
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BLF647P
1786-BLF647P
晶体管 - FET,MOSFET - 射频
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Trans RF FET N-CH 65V 5-Pin CDFM
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BLF647P详情
NXP Semiconductors BLF647P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Channel Mode
Enhancement
Number of Elements per Chip
2
Process Technology
LDMOS
Maximum Drain Source Voltage (V)
65
Maximum Gate Source Voltage (V)
11
Maximum Gate Threshold Voltage (V)
2.4
Maximum VSWR
10
Maximum Gate Source Leakage Current (nA)
50
Maximum IDSS (uA)
1.4
Maximum Drain Source Resistance (mOhm)
140(Typ)@6.15V
Typical Input Capacitance @ Vds (pF)
78@32V
Typical Reverse Transfer Capacitance @ Vds (pF)
1.3@32V
Typical Output Capacitance @ Vds (pF)
30@32V
Output Power (W)
200
Typical Power Gain (dB)
18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|19
Maximum Frequency (MHz)
1500
Minimum Frequency (MHz)
10
Typical Drain Efficiency (%)
70
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
200
Supplier Package
CDFM
Military
无
Mounting
Screw
Package Height
4.75(Max)
Package Length
34.16(Max)
Package Width
9.91(Max)
PCB changed
5
零件状态
活跃
引脚数量
5
配置
双共源
信道型
N
操作方式
Class-AB|2-Tone Class-AB|Pulsed RF|CW Class-B
RoHS状态
符合RoHS标准
BLF647P拓展信息
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP Semiconductors
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.







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