NXP Semiconductors BLF6G10-135RN,112

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Continuous Drain Current (A)

32

Maximum Drain Source Resistance (mOhm)

100(Typ)@6.15V

Typical Reverse Transfer Capacitance @ Vds (pF)

2@28V

Typical Forward Transconductance (S)

13

Output Power (W)

26.5(Typ)

Typical Power Gain (dB)

21

Maximum Frequency (MHz)

894

Minimum Frequency (MHz)

869

Typical Drain Efficiency (%)

28

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

SOT-502A

Military

无

Mounting

Screw

Package Height

4.72(Max)

Package Length

34.16(Max)

Package Width

9.91(Max)

PCB changed

3

Manufacturer Package Code

SOT502A

Rohs Code

有

Manufacturer Part Number

BLF6G10-135RN,112

Manufacturer

恩智浦半导体

Part Life Cycle Code

Obsolete

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.84

Part Package Code

SOT

包装

Bulk

零件状态

Obsolete

Reach合规守则

unknown

引脚数量

3

Brand Name

恩智浦半导体

配置

Single

信道型

N

操作方式

2-Carrier W-CDMA

RoHS状态

符合RoHS标准