NXP Semiconductors BLF6G27LS-40P

表面安装

YES

终端数量

4

晶体管元件材料

SILICON

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Continuous Drain Current (A)

15.5

Maximum Drain Source Resistance (mOhm)

360(Typ)@6.15V

Typical Forward Transconductance (S)

2.9

Output Power (W)

20(Typ)

Typical Power Gain (dB)

17.5

Maximum Frequency (MHz)

2700

Minimum Frequency (MHz)

2500

Typical Drain Efficiency (%)

30

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

LDMOST

Military

无

Mounting

表面贴装

Package Height

4.75(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

5

Package Description

FLATPACK, R-CDFP-F4

Package Style

FLATPACK

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BLF6G27LS-40P

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

2

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.72

Drain Current-Max (ID)

15.5 A

零件状态

活跃

ECCN 代码

EAR99

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

5

JESD-30代码

R-CDFP-F4

配置

双共源

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

DS 击穿电压-最小值

65 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

S带

操作方式

1-Carrier W-CDMA|IS-95

RoHS状态

符合RoHS标准