NXP Semiconductors BLF6G27LS-75,112

包装/外壳

SOT-502B

供应商器件包装

SOT502B

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Continuous Drain Current (A)

18

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Reverse Transfer Capacitance @ Vds (pF)

1.6@28V

Typical Forward Transconductance (S)

7

Output Power (W)

75(Typ)

Typical Power Gain (dB)

17

Maximum Frequency (MHz)

2700

Minimum Frequency (MHz)

2500

Typical Drain Efficiency (%)

23

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Automotive

无

Standard Package Name

SOT

Supplier Package

SOT-502B

Military

无

Mounting

表面贴装

Package Height

4.72(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

3

Lead Shape

Flat

Package

Tray

厂商

NXP USA Inc.

Product Status

Obsolete

Voltage Rated

65 V

包装

Bulk

系列

-

零件状态

Obsolete

额定电流

18A

频率

-

引脚数量

3

配置

Single

测试电流

600 mA

晶体管类型

LDMOS

增益

-

信道型

N

功率 - 输出

9W

噪声图

-

电压-测试

28 V

操作方式

1-Carrier N-CDMA

RoHS状态

符合RoHS标准