NXP Semiconductors BLF6G27LS-75,118

底架

表面贴装

引脚数

3

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Continuous Drain Current (A)

18

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Reverse Transfer Capacitance @ Vds (pF)

1.6@28V

Typical Forward Transconductance (S)

7

Output Power (W)

75(Typ)

Typical Power Gain (dB)

17

Maximum Frequency (MHz)

2700

Minimum Frequency (MHz)

2500

Typical Drain Efficiency (%)

23

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Standard Package Name

SOT

Supplier Package

SOT-502B

Military

无

Mounting

表面贴装

Package Height

4.72(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

3

Lead Shape

Flat

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Voltage, Rating

65 V

Number of Elements

1

RoHS

Compliant

包装

卷带

零件状态

Obsolete

最高工作温度

200 °C

最小工作温度

-65 °C

额定电流

18 A

频率

2.7 GHz

引脚数量

3

配置

Single

元素配置

Single

输出功率

9 W

测试电流

600 mA

漏源电压 (Vdss)

65 V

连续放电电流(ID)

18 A

栅极至源极电压(Vgs)

13 V

增益

17 dB

最高频率

2.7 GHz

最大输出功率

75 W

漏源击穿电压

65 V

信道型

N

操作方式

1-Carrier N-CDMA

测试电压

28 V

RoHS状态

符合RoHS标准