NXP Semiconductors BLF6G38-10,112

Typical Drain Efficiency (%)

20

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

CDFM

Military

无

Mounting

表面贴装

Package Height

3.63(Max)

Package Length

6.93(Max)

Package Width

6.93(Max)

PCB changed

3

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Continuous Drain Current (A)

3.1

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Reverse Transfer Capacitance @ Vds (pF)

3.6@28V

Typical Forward Transconductance (S)

0.8(Min)

Output Power (W)

2(Typ)

Typical Power Gain (dB)

14

Maximum Frequency (MHz)

3600

Minimum Frequency (MHz)

3400

包装

Bulk

引脚数量

3

配置

Single

信道型

N

操作方式

1-Carrier N-CDMA

RoHS状态

符合RoHS标准