NXP Semiconductors BLF871,112

ECCN (US)

EAR99

HTS

8541.29.00.75

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

89

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Drain Source Resistance (mOhm)

210(Typ)@6.15V

Typical Input Capacitance @ Vds (pF)

95@40V

Typical Reverse Transfer Capacitance @ Vds (pF)

1@40V

Typical Output Capacitance @ Vds (pF)

30@40V

Output Power (W)

100(Typ)

Typical Power Gain (dB)

21|21|21|21|21|21|22

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

60

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

LDMOST

Mounting

Screw

Package Height

4.67(Max)

Package Length

20.45(Max)

Package Width

5.97(Max)

PCB changed

3

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BLF871,112

Manufacturer

Ampleon

Part Life Cycle Code

Obsolete

Ihs Manufacturer

AMPLEON NETHERLANDS B V

Risk Rank

8.49

包装

Bulk

零件状态

Obsolete

ECCN 代码

EAR99

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

配置

Single

信道型

N

操作方式

CW Class-AB|DVB-T|2-Tone Class-AB

RoHS状态

符合RoHS标准