NXP Semiconductors BLF881S,112

工厂交货时间

26 Weeks

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

104

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Drain Source Resistance (mOhm)

210(Typ)@6.15V

Typical Input Capacitance @ Vds (pF)

100@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

1@50V

Typical Output Capacitance @ Vds (pF)

33.5@50V

Output Power (W)

140(Typ)

Typical Power Gain (dB)

21

Maximum Frequency (MHz)

860

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

49

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

LDMOST

Military

无

Mounting

表面贴装

Package Height

4.67(Max)

Package Length

9.78(Max)

Package Width

5.92(Max)

PCB changed

3

Package

Bulk

Base Product Number

BLF88

厂商

NXP USA Inc.

Product Status

活跃

Package Description

FLATPACK, R-CDFP-F2

Package Style

FLATPACK

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BLF881S,112

Package Shape

RECTANGULAR

Manufacturer

Ampleon

Number of Elements

1

Part Life Cycle Code

接触制造商

Ihs Manufacturer

AMPLEON NETHERLANDS B V

Risk Rank

5.27

包装

Bulk

系列

*

零件状态

活跃

ECCN 代码

EAR99

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

参考标准

IEC-60134

JESD-30代码

R-CDFP-F2

配置

Single

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

DS 击穿电压-最小值

104 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

超高频段

操作方式

DVB-T|2-Tone Class-AB

RoHS状态

符合RoHS标准