NXP Semiconductors BLF8G22LS-160BV:11

ECCN (US)

EAR99

Channel Mode

Enhancement

HTS

8541.29.00.75

Maximum VSWR

10

Maximum Gate Threshold Voltage (V)

2.3

Maximum Gate Source Voltage (V)

13

Maximum Drain Source Voltage (V)

65

Process Technology

LDMOS

Number of Elements per Chip

2

Mounting

表面贴装

Military

无

Package Width

9.91(Max)

PCB changed

7

Package Height

4.75(Max)

Package Length

20.7(Max)

Maximum Gate Source Leakage Current (nA)

450

Maximum IDSS (uA)

4.5

Maximum Drain Source Resistance (mOhm)

60(Typ)@6.05V

Typical Forward Transconductance (S)

16

Output Power (W)

55(Typ)

Typical Power Gain (dB)

18

Maximum Frequency (MHz)

2170

Minimum Frequency (MHz)

2110

Typical Drain Efficiency (%)

32

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

CDFM

包装

Bulk

零件状态

Obsolete

引脚数量

7

配置

Dual

信道型

N

操作方式

2-Carrier W-CDMA

RoHS状态

符合RoHS标准