NXP Semiconductors BLF988S,112

包装/外壳

SOT539B

供应商器件包装

SOT539B

HTS

8541.29.00.75

ECCN (US)

EAR99

Maximum Gate Threshold Voltage (V)

2.4

Maximum Gate Source Voltage (V)

11

Maximum Drain Source Voltage (V)

110

Process Technology

LDMOS

Number of Elements per Chip

2

Channel Mode

Enhancement

Package Width

10.29(Max)

Package Length

32.39(Max)

Package Height

4.7(Max)

Mounting

表面贴装

Military

无

Supplier Package

SOT-539B

Maximum Operating Temperature (°C)

200

Minimum Operating Temperature (°C)

-65

Typical Drain Efficiency (%)

46

Minimum Frequency (MHz)

500

Maximum Frequency (MHz)

1000

Typical Power Gain (dB)

20.8

Output Power (W)

250(Min)

Typical Output Capacitance @ Vds (pF)

74@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.2@50V

Typical Input Capacitance @ Vds (pF)

220@50V

Maximum Drain Source Resistance (mOhm)

143(Typ)@6.15V

Maximum IDSS (uA)

2.8

Maximum Gate Source Leakage Current (nA)

280

Maximum VSWR

40

PCB changed

5

Voltage Rated

110 V

Product Status

活跃

厂商

NXP USA Inc.

Package

Tube

包装

Bulk

系列

-

零件状态

Obsolete

额定电流

-

频率

860MHz

引脚数量

5

配置

双共源

测试电流

1.3 A

晶体管类型

LDMOS (Dual), Common Source

增益

20.8dB

信道型

N

功率 - 输出

250W

噪声图

-

电压-测试

50 V

操作方式

Pulsed RF Class-AB|2-Tone Class-AB

RoHS状态

符合RoHS标准