NXP Semiconductors BLL1214-35,112

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

HTS

8541.29.00.75

ECCN (US)

EAR99

Maximum VSWR

5

Maximum Gate Source Voltage (V)

±15

Maximum Drain Source Voltage (V)

75

Process Technology

LDMOS

Number of Elements per Chip

1

Channel Mode

Enhancement

Package Width

5.97(Max)

Package Length

20.45(Max)

Package Height

4.67(Max)

Mounting

Screw

Military

无

Supplier Package

LDMOST

AEC Qualified

Unknown

Maximum Operating Temperature (°C)

200

Minimum Operating Temperature (°C)

-65

Typical Drain Efficiency (%)

43(Min)

Minimum Frequency (MHz)

1200

Maximum Frequency (MHz)

1400

Typical Power Gain (dB)

13(Min)

Output Power (W)

35

Maximum Power Dissipation (mW)

110000

Typical Forward Transconductance (S)

2

Maximum Drain Source Resistance (mOhm)

300(Typ)@10V

PCB changed

3

Package

Bulk

Base Product Number

BLL12

厂商

NXP USA Inc.

Product Status

活跃

Package Description

CERAMIC PACKAGE-3

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Manufacturer Package Code

SOT467C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

200 °C

Rohs Code

有

Manufacturer Part Number

BLL1214-35,112

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.74

Part Package Code

SOT

包装

Bulk

系列

*

零件状态

Obsolete

ECCN 代码

EAR99

HTS代码

8541.29.00.75

子类别

FET 通用电源

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-CDFM-F2

资历状况

不合格

Brand Name

恩智浦半导体

配置

Single

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

DS 击穿电压-最小值

75 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

110 W

最高频段

L带

操作方式

AB类

RoHS状态

供应商未确认