NXP Semiconductors BLP7G22-05

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.3

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

1800(Typ)@6.05V

Typical Forward Transconductance (S)

0.08

Output Power (W)

5.5(Min)

Typical Power Gain (dB)

16

Maximum Frequency (MHz)

2700

Minimum Frequency (MHz)

700

Typical Drain Efficiency (%)

23

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Supplier Package

HVSON EP

Military

无

Mounting

表面贴装

Package Height

0.82

Package Length

6

Package Width

4

PCB changed

12

零件状态

活跃

引脚数量

12

配置

单双闸门

信道型

N

操作方式

脉冲CW

RoHS状态

符合RoHS标准