NXP Semiconductors BLP7G22-10

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.3

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

1000(Typ)@6.05V

Typical Forward Transconductance (S)

0.16

Output Power (W)

2(Typ)

Typical Power Gain (dB)

16

Maximum Frequency (MHz)

2700

Minimum Frequency (MHz)

700

Typical Drain Efficiency (%)

23

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Supplier Package

HVSON EP

Military

无

Mounting

表面贴装

Package Height

0.82

Package Length

6

Package Width

4

PCB changed

12

Moisture Sensitivity Levels

3

Rohs Code

有

Manufacturer Part Number

BLP7G22-10

Manufacturer

恩智浦半导体

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.69

零件状态

活跃

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

时间@峰值回流温度-最大值(s)

30

引脚数量

12

配置

Single

信道型

N

操作方式

1-Carrier W-CDMA|Pulsed CW|2-Carrier W-CDMA

RoHS状态

符合RoHS标准