NXP Semiconductors BLS2933-100,112

ECCN (US)

3A001.b.3.a.3

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

15

Maximum VSWR

10(Min)

Maximum Continuous Drain Current (A)

12

Maximum Drain Source Resistance (mOhm)

90(Typ)

Typical Reverse Transfer Capacitance @ Vds (pF)

2.8@28V

Typical Forward Transconductance (S)

9

Output Power (W)

120(Typ)

Typical Power Gain (dB)

8

Maximum Frequency (MHz)

3300

Minimum Frequency (MHz)

2900

Typical Fall Time (ns)

6

Typical Rise Time (ns)

20

Typical Drain Efficiency (%)

40

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

SOT-502A

Military

无

Mounting

Screw

Package Height

4.72(Max)

Package Length

34.16(Max)

Package Width

9.91(Max)

PCB changed

3

Manufacturer Package Code

SOT502A

Rohs Code

有

Manufacturer Part Number

BLS2933-100,112

Manufacturer

恩智浦半导体

Part Life Cycle Code

生命周期结束

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.76

Part Package Code

SOT

包装

Bulk

零件状态

Obsolete

Reach合规守则

unknown

引脚数量

3

Brand Name

恩智浦半导体

配置

Single

信道型

N

源Url状态检查日期

2013-06-14 00:00:00

操作方式

AB类

RoHS状态

供应商未确认