NXP Semiconductors BLS6G2731-6
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BLS6G2731-6
1786-BLS6G2731-6
晶体管 - FET,MOSFET - 射频
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Trans RF MOSFET N-CH 60V 3.5A 3-Pin CDFM
1最小包装量--
BLS6G2731-6详情
NXP Semiconductors BLS6G2731-6重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Channel Mode
Enhancement
Number of Elements per Chip
1
Process Technology
LDMOS
PCB changed
3
Package Width
6.93(Max)
Package Length
6.93(Max)
Package Height
3.63(Max)
Mounting
表面贴装
Supplier Package
CDFM
AEC Qualified
Unknown
Maximum Operating Temperature (°C)
200
Minimum Operating Temperature (°C)
-65
Typical Drain Efficiency (%)
33
Minimum Frequency (MHz)
2700
Maximum Frequency (MHz)
3100
Typical Power Gain (dB)
15
Output Power (W)
6
Typical Forward Transconductance (S)
0.81(Min)
Maximum Drain Source Resistance (mOhm)
Maximum Continuous Drain Current (A)
3.5
Maximum VSWR
5
Maximum Gate Source Voltage (V)
13
Maximum Drain Source Voltage (V)
60
零件状态
Obsolete
引脚数量
3
配置
Single
信道型
N
操作方式
脉冲射频
RoHS状态
符合RoHS标准
BLS6G2731-6拓展信息
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP Semiconductors
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.







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